| PART |
Description |
Maker |
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST PLD
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3
IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
RELAY SSR 110A 240VAC AC INPUT
3.3V In-System Programmable SuperFASTHigh Density PLD
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFAST?/a> High Density PLD
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128
In-System Programmable SuperFAST??High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
SCREW MACHINE SLOTTED 6-32X3/4
High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44
High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| ISPLSI2032VE06 ISPLSI2032VE300LB49 ISPLSI2032VE300 |
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST PLD
3.3V In-System Programmable High Density SuperFAST垄芒 PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST?PLD
|
Lattice Semiconductor
|
| ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
EE PLD, 10 ns, PBGA256
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| ISPLSI2032A-80LJ ISPLSIB2032 ISPLSIB2032-110LJ ISP |
(ISPLSI2032/A) In-System Programmable SuperFAST High Density PLD
In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| QL3025-0PQ208M QL3025-2PQ208M QL3012 QL3012-0PL84M |
60,000 usable PLD gate pASIC3 FPGA combining high performance and high density.
40,000 usable PLD gate pASIC3 FPGA combining high performance and high density.
25,000 usable PLD gate pASIC3 FPGA combining high performance and high density.
pASIC3 FPGA Combining High Performance and High Density(高性能和高密度相结合的pASIC3现场可编程门阵列)
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
QuickLogic Corp.
|
